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A comparator in a low-power 65-nm complementary metal-oxide-semiconductor process (only standard transistors with threshold voltage Vt ap 0.4 V were used) is presented, where the circuit of a conventional latch-type comparator consisting of two cross-coupled inverters is modified for fast operation, even with 0.6 GHz at a low supply voltage of 0.65 V. The advantages of a high-impedance input, rail-to-rail...
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