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Dynamic changes in distribution of mechanical strain generated during wire bonding in Si under and near the bonding pad were measured by using a piezoresistive linear array sensor. The sensor was designed to be able to determine strains in the directions normal and parallel to the surface. Bonding dynamics of Cu and Au balls were investigated. We can clearly observe the oscillating strain according...
We have developed a strain gauge sensor to measure two axial dynamic strain and temperature evolution during ultrasonic flip-chip bonding. The sensor detects strain from change in resistance due to the piezoresistance effect of Si and temperature from change in current-voltage characteristics of pn-junction. The spatial resolution of the sensor is 20 µm. Au planar microbumps were used for the measurement...
Dynamic change in distribution of strain generated in Si under a pad electrode was measured during ultrasonic ball bonding by using newly developed Si strain sensor. The sensor was designed to be able to determine strains in the directions normal and parallel to the surface. Bonding of Cu and Au was measured. It was clearly observed that the position of the largest compressive strain moved from the...
A 2D transient nonlinear finite-element (FE) analysis of thermo sonic wire bonding process on Al-capped Cu/low-k structure is carried out to understand the deformations of bond pad and the responses of structure under bond pad. An FE methodology is established that includes the ultrasonic vibration of the capillary and the analysis is studied at the impacting stage of the wire bonding process. The...
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