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Boron incorporation in 650nm thick polycrystalline BaTiO 3 films results in grain growth and dramatic dielectric response improvements. For levels between 0% and 3%, average grain size is increased from 150 to 200nm and the maximum permittivity values are nearly doubled, with tunabilities increased to greater than 90% while maintaining high field loss tangents below 0.03. These results demonstrate...
The dihedral angle distribution of electroplated (EP) Cu films is significantly broader than those of vapor-deposited films, which may indicate anisotropy of the grain boundary energies. Additives incorporated during EP are presumed to cause anisotropy in the grain boundary energy and abnormal grain growth during self-annealing.
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