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The reliability of advanced embedded non-volatile memories has been discussed using the 2T-FNFN devices example. The write/erase endurance and the data retention are the most important reliability parameters. The intrinsic reliability mechanisms can be addressed through single cell evaluation, while the cell-to-cell variation determines the product level reliability. The cell-to-cell variation can...
Since the very beginning of the flash memory era, the market has been dominated by the floating gate technology. However, as floating gate flash continues along a very steep scaling path, more and more barriers start to appear, limiting further scaling possibilities of the technology. At the same time, other concepts are preparing to take over. This paper concentrates on the prospect of high-k materials...
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