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The High Electron Mobility Transistor (HEMT) is a form of field effect transistor (FET), that is used to provide very high levels of performance at microwave frequencies. The HEMT offers a combination of low noise figure combined with the ability to operate at the very high microwave frequencies. Accordingly the device is used in areas of RF design where high performance is required at very high RF...
This paper reports the theoretical analysis of substrate (Sapphire, Si, SiC, Diamond) effects on the saturation drain current and transconductance of Al.27Ga.73N/GaN high-electron mobility transistor using analytical approach. This model includes polar optical phonon scattering, source-drain resistance and self-heating effects with a wide temperature ranges. It is found that substrates have significant...
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