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This work presents a comparative analysis of Si/Ge and GaSb/InAs heterojunction Tunnel FET (TFET)-based cellular neural networks (CNNs). TFET-based CNNs are also compared against an equivalent FinFET-based CNN. A simulation methodology is shown to project realistic estimation of TFET-CNN performance based on the measured IDS-VGS characteristics of TFETs. III-V-TFET (i.e., GaSb/InAs TFET) shows a higher...
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