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In order to increase the power handling capability and to realize high efficiency in power converters, paralleling of GaN FETs are essential. This paper discusses the challenges in paralleling of GaN devices in an isolated full bridge dc-dc converter. When they are used for parallel operation, equal sharing of current should be ensured in the devices. A 2.4 kW isolated full bridge converter is developed...
The paper presents the design and development of an ultra-high efficiency bidirectional isolated full bridge dc-dc converter using Gallium Nitride (GaN) devices. To achieve ultrahigh efficiency, GaN devices, synchronous rectification and high efficiency magnetics are used. The proposed bidirectional converter allows a power flow in both directions using the same power components; this increases power...
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