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Electron-spin based data storage for on-chip memories has the potential for ultra-high density, low-power consumption, very high endurance, and reasonably low read/write latency. In this article, we analyze the energy-performance characteristics of a state-of-the-art spin-transfer-torque based magnetic random access memories (STT-MRAM) bit-cell in the presence of parametric process variations. In...
In this paper we quantify the electrical properties of magnetic tunnel junctions with conducting atomic force microscopy (CAFM). Using rectangular pillars patterned on a magnetic tunnel junction film with in plane anisotropy, we examine the repeatability of CAFM measurements on the same pillar. We also quantify the variability seen across over 200 different pillars of sizes ranging from 600 nm ??...
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