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Abstract - A new cost-effective concept for RF-LDMOS transistors in a standard 0.13 mum CMOS technology without process modifications is demonstrated. For the integration of the devices only standard implants of the RF-CMOS process are used. The devices have gate length of 0.35 mum and share the 7 nm gate oxide of the 3.3 V CMOS I/O devices. A breakdown voltage of 19 V and fT/fMAX values of 25 GHz/55...
This paper proposes a cost-effective RF power cell manufactured in an advanced 0.13 um CMOS technology. Without adding additional masks, cost, and process, the power performance can be improved just by using the standard N-well and shallow-trench-isolation processes to form a higher resistive region. This ldquoPseudo-Drainrdquo structure increases the breakdown voltage to more than 4.3V and is higher...
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