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In this paper, we report the benefits of wide bandgap technology in UMTS applications. For this purpose, three, 10 W, 2.14 GHz class AB power amplifiers based on SiC MESFET and GaN HEMTs have been designed. A model based design procedure with simulated load pull characterization was used and the achieved results of the implemented amplifiers show an excellent performance from the efficiency/ linearity...
This paper describes a method for designing single-ended high-efficiency switched-mode class-E UHF power amplifiers. The design procedure consists of a modified load pull transistor characterization from which a power/efficiency metric is calculated. Results for four prototypes using different device technologies are presented in detail. Amplifiers with Si-LDMOS, SiC-MESFET, GaN-HEMT on a Si substrate,...
This paper describes the design, fabrication and measurement of two single-stage class-AB power amplifiers covering the frequency band from 0.7-1.8 GHz using a SiC MESFET and a GaN HEMT. The measured maximum output power for the SiC amplifier at Vd = 48 V was 41.3 dBm (~13.7 W), with a PAE of 32% and a power gain above 10 dB. At a drain bias of Vd= 66 V at 700 MHz the Pmax was 42.2 dBm (~16.6 W) with...
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