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AlGaN/GaN high-electron-mobility transistors (HEMTs) which have the Schottky contact only formed on the unetched region and the SiO2 passivation using an inductively coupled chemical vapor deposition (ICP-CVD) was proposed. The proposed device does not have any Schottky contact on the dry-etched region because the Schottky contact formation is performed prior to the mesa isolation, which suppresses...
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