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In this study, an Si/PEOX/SiCN/SiOCH/SiCN multilayered film stack has been prepared by chemical vapor deposition. The bonding configurations between porous SiOCH film and SiCN etch stop layers have been analyzed by X-ray photoelectron spectroscopy, and the interface adhesion has been investigated by nanoindentation and nanoscratch tests. Elements of Si, C, N, and O constructed an interlayer region...
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