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Impedance source inverters have attracted much attention in recent years due to their ability to behave as voltage elevators/reducers at their output terminals without the need of an extra dc/dc converter to accomplish this task. Among these inverters, the quasi-impedance source inverter (qZSI) is one of the most known topologies. It considers two basic operating states, the no-shoot-through state...
We developed a gate driver IC that can power IGBTs of up to 500 amperes for HEVs and EVs. A newly developed Zener clamping circuit effectively suppressed the IGBT spike voltage in short circuit (SC) mode. The silicon-on-insulator (SOI) process was utilized to achieve high temperature operation and high surge protection.
This paper presents a proposal of MOSFETs series and parallel connections. This configuration allows the increase of maximum operating voltage and current values in these circuit breakers. The unbalance compensation method is performed at the side gate from a single active driver circuit. The mathematical formulation is done and the results are validated through simulation. The main advantages and...
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