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Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
This paper considers mechanical stress and strain in a piezoresistive cantilever sensor under surface stress loading, which is the loading condition that occurs in biochemical sensing applications. Finite element simulations examine the piezoresistor sensitivity due to changes in cantilever length, width, and thickness, and piezoresistor size, location, and depth. A few unexpected results are found...
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