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This paper presents principles and results of dynamic testing of an SRAM-based FPGA using time- resolved fault injection with a pulsed laser. The synchronization setup and experimental procedure are detailed. Fault injection results obtained with a DES crypto-core application implemented on a Xilinx Virtex II are discussed.
This paper reviews recent experimental confirmations that the intrinsic radiation robustness of commercial CMOS technologies naturally improves with the down-scaling. When additionally using innovative design techniques, it becomes now possible to assure that performance and radiation-hardness are both met. An illustration is given with an original nano-power and radiation-hardened 8 Mb SRAM designed...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
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