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The frequency spectra of sign inverted photomagnetoelectric responses in narrow gap semiconductors InSb, InAs, and Cd_{0.2}Hg_{0.8}Te, excited by nanosecond laser light pulses, were used for calculation of induced electromagnetic radiation frequency spectra in dipole approximation. The parallelepiped shape sample was considered as capacitor-like point dipole. The known Fourier transform property was...
An optical pump - terahertz probe technique was used for measuring electron lifetime in various Ga_{1-x}Mn_xAs epitaxial layers with the subpicosecond temporal resolution. The measurements were performed on the samples with x up to 2%, which had large resistivities and were transparent in a THz frequency range. It has been found that an induced THz absorption relaxation is the fastest and electron...
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