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Recently, significant work has been carried out to develop a technology based on 4H-SiC semiconductors aimed to utilize the unique physical and electrical properties of this material to achieve improved performance in high-power and high-temperature electronic circuits. This work is an effort to develop an analytical model for the 4H-SiC based n-channel enhancement mode MOSFET (NMOS). Here, a simple...
Carbon Nanotube Field Effect Transistors (CNTFET) are promising nano-scaled devices for implementing high performance, very dense and low power circuits. The core of a CNTFET is a carbon nanotube. Its conductance property is determined by the so-called chirality of the tube; chirality is difficult to control during manufacturing. This results in conducting (metallic) nanotubes and defective CNTFETs...
Vertical MOSFETs device have one important disadvantage, which is higher overlap capacitances such as the separated gate-source and gate-drain parasitic capacitances (CGSO and CGDO), which is known to be most crucial to the high-frequency/speed performance but very hard to extract. In this paper presents parameter extraction techniques to create an extended BSIM model card of vertical p-MOSFETs for...
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