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This article describes test ship design and parameter extraction of parasitic capacitance of MOSFET in VLSI. The test structure for separating area and side-wall capacitance components of N+Psub junction and P+Nwell junction are used as testing devices. The BSIM3v3 models are proposed also. The results suggest that the correlation was found in 2% level. The manual calculation should be used for the...
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