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La-doped HfSiO samples show lower threshold voltage (Vth) and gate current (Igate), which is attributed to dipole formation at the high-k/SiO2 interface. At low and intermediate field stress, La-doped devices exhibit better immunity to positive bias temperature instability (PBTI) due to their lower charge trapping efficiency than the control HfSiO, which mainly results from a dipole-induced greater...
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