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In this paper, the hot-carrier induced oxide trap and its correlation with enhanced degradation in strained CMOS devices have been reported for the first time. First, the ID-RTN (drain current random telegraph noise) has been employed to study the HC stress induced slow oxide traps in strained nMOSFETs and pMOSFETs. Secondly, different behavior of the slow traps in nMOSFET and pMOSFET has been observed...
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