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We have tested and validated a non-destructive analysis method of multilayer structure, which combine X-ray emission spectroscopy and X-ray reflectometry at 0.154 and 1.33 nm. In this purpose, a series of Mo/Si and Mo/B 4 C/Si/B 4 C multilayers, deposited by magnetron sputtering, have been designed. The thickness of the Mo layer is 2 nm and that of the Si layers varies between 1 and...
We investigate on a Mo/Si multilayer interferential mirror (MIM) as a function of annealing at temperatures up to 600°C. The physicochemical state of the silicon atoms within the MIM is characterized by X-ray emission spectroscopy (XES). A thin silicide layer is detected at the interfaces of the as-prepared system, whose thickness increases upon annealing. Measurements of the reflecting power at 1...
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