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Single layers of ZnSe with thicknesses of 30, 40, 50, 70 and 100 nm are deposited at room substrate temperature by thermal evaporation of ZnSe powder in vacuum. The layers surface morphology has been investigated by atomic force microscopy. Structural characterization by the Raman scattering measurement revealed the existence of randomly oriented crystalline ZnSe particles in all layers, and the presence...
A series of ZnSe single layers having thickness between 30 nm and 1 μm was deposited on c-Si and glass substrates at room substrate temperature. Thermal evaporation of ZnSe powder in high vacuum has been applied. Moreover, SiO_x/ZnSe periodic multilayers prepared by the same deposition technique and having ZnSe layer thickness of 2 and 4 nm have been studied. Raman spectra were measured at 295 K,...
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