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The epitaxial growth of doped ZnO films is of great technological importance. Present paper reports a detailed investigation of Sc-doped ZnO films grown on (100) silicon p-type substrates. The films were deposited by sol–gel technique using zinc acetate dihydrate as precursor, 2-methoxyethanol as solvent and monoethanolamine (MEA) as a stabilizer. Scandium was introduced as dopant in the solution...
In this study, epitaxial ZnO films were grown hydrothermally on (111)-oriented single crystal MgAl 2 O 4 substrates at 150°C from aqueous precursor solutions. It was observed that the film morphology varied with the pH value of the precursor solution, giving pitted films at higher pH and smooth films at lower pH. The photoluminescence spectra of these ZnO films showed a strong near...
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