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A series of ZnMgO oxide films single doped with arsenic was grown by plasma assisted molecular beam epitaxy method. The concentration of Mg in Zn1-xMgxO alloys was evaluated on the basis of X-Ray photoelectron spectroscopy (XPS). Changes of the band gap energy in Zn1−xMgxO were evidenced by cathodoluminescence measurements. Analysis of high resolution As 3d XPS spectra revealed three arsenic states...
Zinc oxide films single, double and triple doped with arsenic, arsenic and nitrogen, arsenic, nitrogen and antimony, were grown by plasma assisted molecular beam epitaxy. Differently doped ZnO samples were post-growth annealed in oxygen or argon atmospheres. Incorporation of impurities into ZnO layers was confirmed by the results of secondary ion mass spectrometry measurements. The high resolution...
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