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The properties of tantalum nitride thin films sputter deposited with and without breaks on pure and oxidized silicon wafers were investigated with respect to their potential use as strain gauges in micromachined sensors for harsh environmental applications. The thin films were deposited using direct current magnetron sputtering at a constant back pressure and plasma power. To lower the deposition...
The influence of nitrogen partial pressure (P N2 ) and argon partial pressure (P Ar ) on internal stress, crystallographic structure, and resistivity have been investigated for reactively sputtered Ti-N films in order to get some insight into the influence of deposition parameters. Ti-N films were deposited onto glass substrates by r.f. reactive magnetron sputtering using a plasma...
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