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We report high performance Ge p+/n junctions using a single, cryogenic (−100 °C) boron ion implantation process. High activation \(> 4\times 10^{20}\) cm\(^{-3}\) results in specific contact resistivity of \(1.7\times 10^{-8}~\Omega \) -cm\(^{2}\) on p+-Ge, which is close to ITRS 15 nm specification (1 \(\times 10^{-8}~\Omega \) -cm\(^{2}\) ) and nearly \(4.5\times \) lower than the...
Physical relationship among regrowth of damaged layer, dopant activation and dopant diffusion has been investigated in the formation of boron shallow junction of Si under low-temperature pre-annealing (PA) and non-melt laser annealing (LA). The degree of crystal regrowth was adjusted with pre-annealing time. It is clarified that the regrowth of amorphous Si layer up to the junction depth has an important...
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