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A model of charge transport in thermal SiO/sub 2/ with Si-implant-induced traps is proposed. In this model, traps are permitted to communicate with both the conduction band and the valence band of the Si substrate and poly-Si gate by means of direct tunneling. Electron injection in the SiO/sub 2/ conduction band, electron trapping by neutral and positively charged sites, and field depopulation of...
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