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Safety critical systems need methods for chips to monitor their health in the field. This paper proposes to use the embedded SRAM as a monitor of system health. The bit failures are tracked and the cause of each bit failure is diagnosed with on-chip built-in self test (BIST). The wearout model parameters are estimated from the diagnosis results and combined with system wearout simulation data to estimate...
Measuring and understanding TDDB reliability in sub-1nm EOT dielectrics is both a practical and scientific challenge. We present three different methods for the experimental determination of the SBD and wearout parameters needed to construct an all-in-one TDDB reliability prediction consisting of a SBD-free region, a leakage current-dominated region and a HBD-limited region. We demonstrate these methods...
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