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In this paper, we report the development of a novel Pt/MoO3 nano-flower/SiC Schottky diode based device for hydrogen gas sensing applications. The MoO3 nanostructured thin films were deposited on SiC substrates via thermal evaporation. Morphological characterization of the nanostructured MoO3 by scanning electron microscopy revealed randomly orientated thin nanoplatelets in a densely packed formation...
4H-SiC bipolar Darlington transistors with a record-high current gain have been demonstrated. The dc forced current gain was measured up to 336 at 200 W/cm2 ( JC = 35 A/cm2 at VCE = 5.7 V) at room temperature. The current gain exhibits a negative temperature coefficient and remains as high as 135 at 200degC. The specific on-resistance is 140 mOmegamiddotcm2 at room temperature and increases at elevated...
In this report, current-voltage (I/V) curves, output luminance of the OLEDs (organic light emitting diodes) with nitrogen (N2) doped ETL (electron transport layer) have been studied in detail. Experimental results show that the turn on voltage and driving voltage of OLEDs with ETL evaporated in the optimum N2 gas ambient pressure of 1times10-4 torr are reduced from 3.5 V to 1 V and 7.7 V to 5.7 V,...
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