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The schematic diagrams of the temperature measuring device based on transistor structures are presented in the paper. The temperature dependence of collector current without and with linearization of the conversion function is analysed. The linearization method based on compensation current formation is proposed. This allowed to reduce the temperature measurement error up to ± 0.006°C over the temperature...
The mathematical model of the microelectronic device for measuring petroleum products humidity which allows to define value of the voltage or current in any point of the circuit during the definite moment of time is designed. Based on the mathematical model of the microelectronic device for measuring petroleum products humidity the dependences of transformation function and equation of sensitivity...
The paper considers a new electric diagram of the microelectronic self-excited oscillator based on the bipolar transistor structure with negative resistance. The oscillator operates in oscillatory and relaxation modes. Chaotic mode of the self-excited oscillator was provided by installing additional components into a basic circuit. Results of the deterministic chaos microelectronic oscillator simulation...
The deterministic chaos mode in a basic circuit of a radiofrequency oscillator based on a bipolar transistor structure with negative resistance have been studied in this paper. Experimental research results for parameters and characteristics of the bipolar transistor structure with negative resistance have been obtained. Chaotic dynamics of the generated oscillation has been explored. Feasibility...
The paper considers an electric circuit of a microelectronic oscillator based on a BJT-MOSFET structure with negative differential resistance. A mathematical model of this oscillator has been developed. Theoretical and practical researches of oscillations dynamics have been carried out. Lyapunov exponents have been calculated. Limits of periodic and chaotic oscillations modes have been determined...
In the paper a deterministic chaos oscillator based on a bipolar and field-effect transistor structure with negative resistance is proposed and examined. A modified mathematical model of Anishchenko-Astakhov is proposed for describing the chaotic oscillation dynamics. The results of mathematical modelling and experimental research are obtained.
The additive white noise impact on dynamics of the Kiyashko-Pikovsky-Rabinovich oscillator based on a field-effect transistor structure with negative resistance has been considered. The results of the mathematical modelling the deterministic chaos oscillator in presence and in absence of white noise have been obtained. The white noise impact on dynamics and parameters of the generated chaotic oscillation...
In the paper, the wide-spread mathematical models of the deterministic chaos transistor oscillators are considered. These models describe dynamic processes to take place in transistor Colpitts oscillators. Variations of the deterministic chaos transistor oscillator's schemes are presented. Phase portraits, time and spectral diagrams of chaotic oscillation were obtained.
In this paper a classical circuit of the Kiyashko-Pikovsky-Rabinovich deterministic chaos oscillator based on a field-effect transistor structure with negative resistance got the further development. The chaotic oscillation dynamic processes in this oscillator have been researched using the improved model. Phase portraits of the oscillator in different operating modes have been obtained.
The article considers a possibility of constructing microwave oscillators on a transistor structure with negative conductivity based on two HEMT. Obtained non-linear equations can be used to model microwave oscillator parameters and characteristics with an error not more than 10%.
The modern SiGe HBT structure with shallow and deep trench isolation (STI and DTI) is analyzed from electrothermal standpoint using TCAD system. The electrical parameters β, fT, fmax, maximal temperature Tmax, and thermal resistance RTH are under consideration. TCAD simulation confirms the fact that the presence of STI and DTI in SiGe HBT structures gains the self-heating effect in comparison with...
The NAND Flash memory is the technological driver for both critical dimensions scaling and process technologies. In order to keep pace with the Moore's Law, the scale chip dimensions decrease to the point where variability effects become significant. Particularly, when printed features go down below the 20 nm, transistors structures are strongly affected by pattern roughness caused by the randomness...
Summary form only given. The energy efficiency of electronic circuits has dramatically improved over the past two decades. At the same time, computation, storage, and communication demands continue to grow with emerging wireless multimedia devices. In this inaugural Plenary Technology-Roundtable event, experts will discuss the opportunities to achieve the next order-of-magnitude reduction in energy...
A quantum transport approach based on the Non-equilibrium Green's Function formalism and the tight-binding method has been developed to investigate the performances of atomistically resolved nanoelectronic devices in the presence of electron-phonon scattering. The model is integrated into a quad-level parallel environment (bias, momentum, energy, and spatial domain decomposition) that scales almost...
The worldwide research in nanoelectronics is motivated by the fact that scaling of MOSFETs by conventional top down approach will not continue for ever due to fundamental limits imposed by physics even if it is delayed for some more years. The research community in this domain has largely become multidisciplinary trying to discover novel transistor structures built with novel materials so that semiconductor...
In this paper a mechanisms affecting excess reverse currents of silicon single-crystalline solar cells was investigated. In principle, significant reverse currents pertinent to solar cells local and/or global imperfections indicate worse reliability. We carried out experiments of U-I curve measurements of local defect-free samples at different temperatures. Two equivalent circuit models for relatively...
The following topics are dealt: advanced transistor structure, architecture and process; RF & AMS; low power electronics; reliability; system level technology assessment; DFM/DFT/DFY/DFR; advanced memory devices; advanced materials; soft error rate; SoC/MPSoC/SIP, IC & platform design & process; and CAD.
2007 saw the introduction of the first 45-nm process node devices into the marketplace. This node is notable not only for the expected reduction in feature sizes, but also for the introduction of a high-k dielectric and metal gate into the transistor structure. At the time of paper submission, Intel is the only company manufacturing high-k/metal gates in its 45-nm product. Other leading-edge manufacturers...
Summary form only given. The scaling of CMOS technology has led to phenomenal growth in transistor density and performance during the last three decades. However, starting at 90nm CMOS node, the industry started to experience significant barriers in achieving historical transistor performance gains through traditional dimensional scaling. Fortunately, the industry has responded positively to this...
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