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An inverse approach is developed and implemented to quantify the resistance of the die-attach thermal interface (DTI) in high power light emitting diodes (LEDs). The transient time domain dominated by the resistance of the DTI is selected first using a hybrid analytical/numerical solution. Then, the resistance of the DTI is determined inversely from the experimental data over the predetermined transient...
The experimental characterization of the thermal impedance Zth of large power MOSFETs is commonly done by measuring the junction temperature Tj in the cooling phase after the device has been heated, preferably to a high junction temperature for increased accuracy. However, turning off a large heating current (as required by modern MOSFETs with low on-state resistances) takes some time because of parasitic...
As the operation performances and reliability of semiconductor devices are tightly related to its junction temperature, the research on the junction temperature prediction and thermal modeling do a significant meaning to extend services lifetime and improve application reliability of the IGBT modules. The physical structure and conception, RC thermal compact network component model, test principle...
This paper proposes a dynamic electrothermal model that can be simulated with the power electronic circuit simulator. It includes a temperature-dependent loss calculation of power semiconductor devices. The proposed model is used to estimate the transient junction temperature of the semiconductor devices. In so doing, the resulting junction temperature is used to facilitate the power sharing between...
The estimation of the power loss and associated transient junction temperature of power devices has become a major issue with the increase of the current density and high switching frequency. Thus, the problem of power device temperature response to fast heat-source changes is of concern. This paper presents a new methodology, which describes the evolution of the complete temperature field in power...
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