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Items from 1 to 20 out of 425 results

chapter

A 10-b 100-MS/s 95mW CMOS ADC IP With Emphasis on Layout Matching

Nan Wang, Ping Zhou

2006 IEEE Asian Solid-State Circuits Conference > 355 - 358

2006 IEEE Asian Solid-State Circuits Conference

This paper describes the design of a 10-b 100-Msamples/s pipelined ADC IP fabricated in a 0.25-um CMOS process with MIM capacitor option. The IP core is implemented with 1.5-b/stage structure, amplifier sharing technique, and swing-improved telescopic OTA design to achieve amplitude of 2.4 V-pp at power supply range from 2.7 V to 3.6 V, dissipating only 95 mW at 3.0 V. For 10.7 MHz input, it achieves...

chapter

An 1.4Gbps/ch LVDS Receiver with Jitter-Boundary-Based Digital De-skew Algorithm

Youngdon Choi, Deog-Kyoon Jeong, Wonchan Kim, Jung-Bae Lee, more

2006 IEEE Asian Solid-State Circuits Conference > 383 - 386

2006 IEEE Asian Solid-State Circuits Conference

This paper introduces jitter-boundary-based (JBB) digitally controlled de-skewing algorithm for high-speed link such as flat panel display (FPD) and memory system. It tracks data sampling points by way of finding the boundaries of jitter probability density function (JPDF). This boundary-based tracking algorithm offers lower bit error rate (BER) under the asymmetric jitter distribution as well as...

chapter

A CMOS Low-Distortion Variable Gain Amplifier with Exponential Gain Control

Li Yin, Ting-Hua Yun, Jian-Hui Wu, Long-Xing Shi

2006 IEEE Asian Solid-State Circuits Conference > 375 - 378

2006 IEEE Asian Solid-State Circuits Conference

In this paper, a CMOS low-distortion variable gain amplifier with exponential gain control is developed by utilizing a transconductance linearization scheme. The VGA is composed of a VGA core based on current-steering structure, an exponential voltage generator based on transfer characteristics of differential pair, and a stage of fixed gain amplifier. The proposed VGA circuit was verified in 0.25...

article

Low-power SOI CMOS antenna switch driver circuit with RF leakage suppression and fast switching time

I.-Y. Lee, D. Im

Electronics Letters > 2017 > 53 > 5 > 293 - 294

A low-power antenna switch driver circuit with RF leakage suppression and fast switching time is implemented in a 0.25 μm silicon-on-insulator (SOI) CMOS process. It is composed of a three-stage current starved ring oscillator with a clock buffer, a charge pump and a latch-based three-state logic driver. The negative voltage from the charge pump is fed into the latch-based three-state logic driver,...

article

Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths

Y.-C. Tsai, Y.-N. Zhong, F.-P. Chou, C.-A. Huang, more

Electronics Letters > 2016 > 52 > 20 > 1707 - 1708

A triple p–n junction Si photodetector using 0.25-μm standard CMOS process at 650- and 850-nm wavelengths is presented and investigated. Triple p–n junctions are formed vertically by n⁺-implant/p-well (N+/HVPW), p-well/n⁺-buried layer (HVPW/NBL), and n⁺-buried layer/p-substrate (NBL/P-sub) junctions to attain a wavelength-dependent response. The responsivity and pulse response were characterised in...

article

6–18 GHz, 8.1 W size-efficient GaN distributed amplifier MMIC

J. Kim, H. Park, S. Lee, Y. Kwon

Electronics Letters > 2016 > 52 > 8 > 622 - 624

A 6–18 GHz, 8.1 W gallium nitride (GaN) distributed amplifier (DA) monolithic microwave integrated circuit (MMIC) is presented with compact size. To accomplish high-output power density with compact size, the last two sections of the DA consist of small-sized FETs. This approach improves the output return loss and allows the drain line lengths to be reduced thereby increasing the drain cut-off frequency...

article

600 GHz InP HBT frequency multiplier

S.H. Choi, M. Urteaga, M. Kim

Electronics Letters > 2015 > 51 > 23 > 1928 - 1930

A 600 GHz monolithic frequency multiplier circuit fabricated using 0.25 μm InP HBT (heterojunction bipolar technology) technology is reported. The multiplier uses two 6 μm finger devices in common-base push–push configuration to obtain extremely simple matching networks. Measurements using on-wafer RF probes indicate maximum output power of −8.3 dBm at 590 GHz with a wide operation bandwidth of better...

article

Microstrip slow-wave line for phase shifting cells

M. Gastaldi, D. Dragomirescu, A. Takacs, V. Armengaud, more

Electronics Letters > 2015 > 51 > 20 > 1589 - 1591

The design, simulation and measurements of microstrip slow-wave lines implemented in a 0.25 µm SiGe bipolar CMOS (BiCMOS) process is addressed for Ku-band (10–15 GHz) applications. The simulation results and the measurements show better performances for the proposed microstrip slow-wave line compared with the classical microstrip transmission line. These lines present very low insertion losses and...

article

X-band SiGe bi-complementary metal–oxide semiconductor transmit/receive module core chip for phased array RADAR applications

Tolga Dinc, Emre Özeren, Can Çalışkan, Hüseyin Kayahan, more

IET Microwaves, Antennas & Propagation > 2015 > 9 > 9 > 948 - 956

This study presents a transmit/receive (T/R) module core chip with 4-bit operation using 0.25 µm silicon–germanium (SiGe) bi-complementary metal–oxide semiconductor (BiCMOS) technology, for X-band phased array RADAR applications. The T/R module core chip consists of sub-blocks such as low noise amplifier, power amplifier, phase shifter, single-pole double-throw switch and variable gain amplifier....

article

Approach for third order quadrature oscillator realisation

Neeta Pandey, Rajeshwari Pandey

IET Circuits, Devices & Systems > 2015 > 9 > 3 > 161 - 171

This paper presents a new approach for third order quadrature oscillator (QO) realisation. It uses a high pass filter and differentiator connected in a feedback loop. A differential voltage current conveyor transconductance amplifier (DVCCTA) is employed to verify the proposed approach. Two circuit topologies of QO have been proposed. Both the topologies utilise two DVCCTA and three grounded capacitors...

article

Design of an oscillator with low phase noise and medium output power in a 0.25 µm GaN-on-SiC high electron-mobility transistors technology

Hang Liu, Xi Zhu, Chirn Chye Boon, Xiang Yi

IET Microwaves, Antennas & Propagation > 2015 > 9 > 8 > 795 - 801

To investigate the effects of both the drain and gate bias voltages on the performance of GaN high electron-mobility transistors (HEMT) oscillator, a 0.25 µm GaN-on-SiC HEMT oscillator is presented in this study. Utilising the designed oscillator, the trade-off between phase noise and output power is effectively investigated at the circuit level. As a result, the designed oscillator can provide low...

article

VLSI implementation of coupled MRF model using pulse-coupled phase oscillators

Kenji Matsuzaka, Hideki Tanaka, Satoru Ohkubo, Takashi Morie

Electronics Letters > 2015 > 51 > 1 > 46 - 48

Efficient pixel-parallel image processing using a pulse-coupled phase oscillator model and its very large scale integration (VLSI) implementation is proposed. A processing unit that corresponds to a pixel of an image transmits spike pulses to other units, and updates its own analogue state value at timing when spikes come from other units. From a VLSI implementation point of view, this mechanism is...

article

0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100

N. Kashio, K. Kurishima, M. Ida, H. Matsuzaki

Electronics Letters > 2014 > 50 > 22 > 1631 - 1633

A suitable emitter structure for the fabrication of InP/InAlGaAs/GaAsSb double heterojunction bipolar transistors (DHBTs) with a passivation ledge is reported. With a composite emitter structure consisting of an InP and thin InAlGaAs, a passivation ledge can be easily fabricated by wet etching. A high current gain of 117 is obtained even for a 0.25 μm emitter DHBT with a base sheet resistance of about...

article

A 32 GSps multiplexer with 1 kbit memory for arbitrary signal generation for testing digital-to-analogue converters

Mahdi Khafaji, Corrado Carta, Klaus Tittelbach-Helmrich, Daniel Micusik, more

IET Circuits, Devices & Systems > 2014 > 8 > 6 > 459 - 468

Recent high-speed digital-to-analogue converters (DACs) cannot be easily characterised at their highest rate because of the very high cost of commercially available bit-error rate testers at the required DACs rate. Among possible solutions, an inexpensive approach is the use of a multiplexer (MUX) with built-in memory to provide the required bit stream for one input bit of the DAC. This work presents...

article

Wide-band high-efficiency Ku-band power amplifier

Alireza Yousefi, Ali Medi

IET Circuits, Devices & Systems > 2014 > 8 > 6 > 583 - 592

A 37 dBm power amplifier (PA) is designed on a 0.25 µm optical T-gate pseudomorphic high electron mobility transistor (pHEMT) technology. The design of this two-stage PA along with a step-by-step design procedure is presented in this paper. This methodology can be used for design of PA in different technologies and frequencies. The PA delivers 5 W output power over the frequency band of 13–19 GHz...

chapter

Domestic Indirect Feedback Compensation of multiple-stage amplifiers for multiple-voltage level-converting amplification

Shang-Hsien Yang, Chua-Chin Wang

2011 IEEE International Conference on IC Design&Technology > 1 - 4

2011 IEEE International Conference on IC Design & Technology (ICICDT)

This investigation presents a Domestic Indirect Feedback Compensation (DIFC) operational amplifier for systems with both low voltage and high voltage circuits. The DIFC operational amplifier is capable of converting a voltage signal from a low voltage circuit and amplifying it into a large voltage signal to drive high voltage load. Since the Metal-Insulator-Metal (MIM) capacitors are not designed...

chapter

New compact power cells for Ku band applications

A Dechansiaud, R Sommet, T Reveyrand, R Quere, more

2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits > 1 - 4

2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC 2011)

This paper reports on the design of new power cells based on GaAs PHEMT transistors with 0.25μm gate length in MMIC technology. The design starts from a fishbone power cell initially designed by United Monolithic Semiconductors (UMS). This one allows us to validate the elementary transistor model. This model is used for other power cells design as cascode cell.

chapter

An integrated differential 60 GHz sliding-IF receiver in SiGe BiCMOS

Yaoming Sun, K Schmalz, S Glisic, Ruoyu Wang, more

2011 3rd International Conference on Computer Research and Development > 3 > 297 - 300

2011 3rd International Conference on Computer Research and Development (ICCRD 2011)

This paper presents an integrated 60 GHz sliding-IF receiver fabricated in a 0.25 μm SiGe BiCMOS technology. The receiver chain consists of a front-end and an IF IQ demodulator centered at around 12 GHz. A 48 GHz PLL is used to generate the front-end LO signal and the IF quadrature LO signals. The measured LNA noise figure is around 6.6 dB. Digital words are used to control the VGA gains and IQ mismatches...

chapter

5μW-to-10mW input power range inductive boost converter for indoor photovoltaic energy harvesting with integrated maximum power point tracking algorithm

Yifeng Qiu, C Van Liempd, Bert Op het Veld, P G Blanken, more

2011 IEEE International Solid-State Circuits Conference > 118 - 120

2011 IEEE International Solid- State Circuits Conference (ISSCC 2011)

This self-contained and fully autonomous converter features an input power range spanning from 5μW up to 10mW while consuming very little power. A comparison with state-of-the-art publications is shown. The method used for MPPT is generic for energy source with one global maximum on their power curves. It is thus possible to use it with TEG and RF harvesters provided their output voltages fall within...

article

Improved Optical and ESD Characteristics for GaN-Based LEDs With an $\hbox{n}^{-}\hbox{-GaN}$ Layer

T H Chiang, Y Z Chiou, S J Chang, C K Wang, more

IEEE Transactions on Device and Materials Reliability > 2011 > 11 > 1 > 76 - 80

Nitride-based light-emitting diodes (LEDs) with an n^- -GaN layer are proposed and fabricated. By providing a larger series resistance in the vertical direction, it was found that the n^--GaN layer could enhance LED output intensity due to the enhanced current spreading. It was also found that LEDs with n^--GaN layer thicknesses of 0.15, 0.2, and 0.25 μm could endure electrostatic discharge surges up...

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Keywords

SIZE 0.25 MUM (425)
CMOS INTEGRATED CIRCUITS (152)
BICMOS INTEGRATED CIRCUITS (88)
GE-SI ALLOYS (78)
SIGE (68)
CMOS TECHNOLOGY (63)
GAIN (56)
TRANSISTORS (55)
BICMOS TECHNOLOGY (49)
LOW-POWER ELECTRONICS (44)
LOGIC GATES (43)
POWER AMPLIFIERS (40)
VOLTAGE 2.5 V (40)
III-V SEMICONDUCTORS (37)
INTEGRATED CIRCUIT DESIGN (37)
CAPACITORS (35)
CMOS PROCESS (35)
RADIO FREQUENCY (32)
SWITCHES (32)
OPERATIONAL AMPLIFIERS (30)
CMOS ANALOGUE INTEGRATED CIRCUITS (29)
NOISE (29)
LOW NOISE AMPLIFIERS (27)
SILICON GERMANIUM (26)
BICMOS ANALOGUE INTEGRATED CIRCUITS (25)
INDUCTORS (25)
CLOCKS (24)
HETEROJUNCTION BIPOLAR TRANSISTORS (24)
IMPEDANCE MATCHING (24)
WIDE BAND GAP SEMICONDUCTORS (24)
HIGH ELECTRON MOBILITY TRANSISTORS (23)
SILICON (23)
CMOS (22)
CONVERTERS (22)
DRIVER CIRCUITS (22)
INTEGRATED CIRCUIT MODELING (22)
RECEIVERS (22)
RESISTANCE (22)
VOLTAGE-CONTROLLED OSCILLATORS (22)
GALLIUM COMPOUNDS (21)
POWER AMPLIFIER (21)
BICMOS (20)
BICMOS PROCESS (20)
DC-DC POWER CONVERTORS (20)
IMPEDANCE (20)
POWER CONSUMPTION (20)
TRANSCEIVERS (20)
ANALOGUE-DIGITAL CONVERSION (19)
BANDWIDTH (19)
GALLIUM ARSENIDE (19)
GALLIUM NITRIDE (19)
MIXERS (19)
SIGE:C (19)
CMOS DIGITAL INTEGRATED CIRCUITS (18)
PHASE NOISE (18)
ALUMINIUM COMPOUNDS (17)
CAPACITANCE (17)
DIFFERENTIAL AMPLIFIERS (17)
MMIC (17)
VOLTAGE 3.3 V (17)
ARRAYS (16)
FREQUENCY 60 GHZ (16)
FREQUENCY MEASUREMENT (16)
GAN (16)
POWER GENERATION (16)
SEMICONDUCTOR MATERIALS (16)
LINEARITY (15)
RADIOFREQUENCY INTEGRATED CIRCUITS (15)
AMPLIFIERS (14)
DECODING (14)
GAAS (14)
MMICS (14)
RADIO RECEIVERS (14)
RESISTORS (14)
SEMICONDUCTOR DEVICE MODELING (14)
SPICE (14)
SUBSTRATES (14)
UHF INTEGRATED CIRCUITS (14)
VOLTAGE CONTROL (14)
CURRENT MEASUREMENT (13)
HEMTS (13)
MMIC POWER AMPLIFIERS (13)
NOISE MEASUREMENT (13)
PHASE LOCKED LOOPS (13)
SEMICONDUCTOR DEVICE MEASUREMENT (13)
VOLTAGE 5 V (13)
HEMT INTEGRATED CIRCUITS (12)
MOSFET (12)
POWER ADDED EFFICIENCY (12)
POWER DISSIPATION (12)
SI (12)
SIGMA-DELTA MODULATION (12)
VOLTAGE 1.5 V (12)
VOLTAGE 1.8 V (12)
VOLTAGE MEASUREMENT (12)
WIDEBAND AMPLIFIERS (12)
3G MOBILE COMMUNICATION (11)
60 GHZ (11)
APPLICATION SPECIFIC INTEGRATED CIRCUITS (11)
BAND PASS FILTERS (11)
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Search results

A 10-b 100-MS/s 95mW CMOS ADC IP With Emphasis on Layout Matching

An 1.4Gbps/ch LVDS Receiver with Jitter-Boundary-Based Digital De-skew Algorithm

A CMOS Low-Distortion Variable Gain Amplifier with Exponential Gain Control

Low-power SOI CMOS antenna switch driver circuit with RF leakage suppression and fast switching time

Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths

6–18 GHz, 8.1 W size-efficient GaN distributed amplifier MMIC

600 GHz InP HBT frequency multiplier

Microstrip slow-wave line for phase shifting cells

X-band SiGe bi-complementary metal–oxide semiconductor transmit/receive module core chip for phased array RADAR applications

Approach for third order quadrature oscillator realisation

Design of an oscillator with low phase noise and medium output power in a 0.25 µm GaN-on-SiC high electron-mobility transistors technology

VLSI implementation of coupled MRF model using pulse-coupled phase oscillators

0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100

A 32 GSps multiplexer with 1 kbit memory for arbitrary signal generation for testing digital-to-analogue converters

Wide-band high-efficiency Ku-band power amplifier

Domestic Indirect Feedback Compensation of multiple-stage amplifiers for multiple-voltage level-converting amplification

New compact power cells for Ku band applications

An integrated differential 60 GHz sliding-IF receiver in SiGe BiCMOS

5μW-to-10mW input power range inductive boost converter for indoor photovoltaic energy harvesting with integrated maximum power point tracking algorithm

Improved Optical and ESD Characteristics for GaN-Based LEDs With an $\hbox{n}^{-}\hbox{-GaN}$ Layer

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