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The hot‐carrier reliability, analog, and linearity characteristics of DMG ISE SON MOSFET have been discussed.The device reduces electron temperature by 35.85% in comparison to a non‐dual material gate (DMG) architecture showing its self‐heating resistant nature. The analog performance and linearity metrics—gm/IDS, Rout, VEA, and gm/gd and VIP2 and VIP3—have been studied facilitating the selection...