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In this paper, we present a new concept for an ultra fast pulse picker, consisting of a tapered diode amplifier and a high-speed high-current transistor switch. The transistor switch is realized using a GaN high-electron mobility transistor (HEMT), which offers low parasitic capacitances und high current capabilities together with high switching speed. Moreover, the SiC transistor substrate gives...
This work present simulations of the operation of tapered semiconductor lasers with separate contacts, in comparison with the experimental results, with the goal of providing a physical understanding of the origin of this improvement. The simulation parameters related to the fabrication technology were calibrated by comparison with experiments in broad area lasers and in tapered lasers with common...
Summary form only given. We have previously reported tapered lasers at 1.3 /spl mu/m with cw output powers of 0.5 W of which nearly 80% was in the central lobe of a nearly diffraction-limited far field. Here we report laser and amplifier results on devices fabricated using improved processing techniques and a new device design. The new device incorporates a ridge waveguide section with the tapered...
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