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Three dimensional silicon integration technologies are gaining considerable attention as the traditional CMOS scaling becoming more challenging and less beneficial. The advanced packaging solutions based on thin silicon carrier are being developed to interconnect integrated circuits and other devices at high densities. A key enabling technology element of the silicon carrier is through silicon via...
High gain Optical Beam Induced Current (OBIC) imaging has been used for the first time to examine the internal structural effects of electrical stress on thermally-isolated polysilicon resistors. The resistors are examined over a wide range of current densities, producing Joule heating up to /spl sim/1200/spl deg/C. Throughout this current density range, the OBIC images indicate a clustering of dopant...
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