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In this work an integrated Time-Of-Flight (TOF) based range finding single pixel sensor in 90nm CMOS is presented. The sensor exploits a PN photodiode for the signal detection, achieving the pixel size of 80 × 86.5 μm2 at the fill factor of ~93%. Measurement results show a standard deviation of 2.5 cm at 1 m and less than 8 cm for distances up to 3.2 m. Ambient light suppression...
A monolithic integrated chip-scale surface plasmon resonance (SPR) sensor is demonstrated. The device consists of a pn photodiode covered with a periodic modified thin metal film whose lattice constant is on the order of the wavelength of light. The device performs real-time measurement of resonant wavelengths of enhanced optical transmission due to surface plasmon resonance, which are influenced...
We review near-infrared detectors in germanium grown on silicon. We discuss pn and pin photodiodes based on Ge deposited on Si by a number of techniques, including thermal evaporation; the optical and electronic characterization of Ge-on-Si heterostructures using various approaches to minimize the density of defects; and compatibility issues with standard fabrication processes for Si electronics....
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