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A 20-29 GHz wideband CMOS low-noise amplifier (LNA) with flat and low noise figure (NF), flat and high gain (S21), and excellent phase linearity property (group-delay-variation is only ±22.6 ps across the whole band) is demonstrated. To achieve flat and low NF, the size, layout and bias of the input transistor were first optimized for minimum NF, and then the inductance of the input inductors was...
A fully integrated 40-Gb/s transceiver fabricated in a 0.13-mum CMOS technology is presented. The receiver operates at a 20-GHz clock performing half-rate clock and data recovery. Despite the low fTof 70 GHz, the input sampler achieves 10-mV sensitivity using pulsed latches and inductive-peaking techniques. In order to minimize the feedback latency in the bang-bang controlled CDR loop, the proportional...
This paper reviews our recent research effort on low-power low-noise amplifier for ultra-wideband applications. Two modified distributed amplifiers and one LNA using inductive-peaking technique for low-power UWB applications were developed. The two modified distributed amplifiers, consuming 5.4- and 6.4-mW dc power, have 10- and 12-dB small-signal gain, respectively. The NF is lower than 6.5 dB from...
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