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Quantum dots (QDs) are of special interest for both fundamental physics and optoelectronic applications. Controlled growth of ensembles of self assembled GaN/AIN QDs showing efficient room-temperature luminescence has been demonstrated recently. On the other hand, GaN-based devices have been shown useful to detect chemically induced changes of the surface potential, thereby acting as chemical sensors...
O długookresowej stabilności parametrów i trwałości czujników pehametrycznych typu ISFET decyduje odpowiednie wykonanie zewnętrznej, czułej chemicznie warstwy dieelektrycznej w obszarze bramki tranzystora i dobrej hermetyzacji za pomocą żywicy gotowego czujnika, obejmującej strukturę półprzewodnikową oraz przewodnikowe odprowadzenia. Ułatwienie problemu hermetyzacji uzyskuje się za pomocą planarnej...
The catalytic activity at the surface of Pt based MIS field effect gas sensors is modified by the deposition of thin films of SnO 2 , Al 2 O 3 and SiO 2 , grown by reactive sputtering. It is found that a very thin layer (<10nm) of SiO 2 and SnO 2 changes the catalytic activity towards higher NH 3 selectivity, but with thicker films the sensor...
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