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A 1.5 A normally-off GaN transistor for power applications in p-type GaN gate technology with a modified epitaxial concept is presented. A higher threshold voltage is achieved while keeping the on-state resistance low by using an Al-GaN buffer instead of a GaN buffer. Additionally, the AlGaN buffer acts as a back-barrier and suppresses source-drain punch-through currents in the off-state. P-GaN gate...
This paper describes an experiment to address the issue of latent damage due to ESD. Controlled low level discharge from an ESD simulator was applied to GMR heads to produce slight damage. These heads were then subjected to overvoltage stress testing at elevated ambient temperature. The heads subjected to minor ESD show increased scattering of the signal amplitude change vs. time. Although the average...
The effects of elevated ambient temperature on the response to exogenous gonadotropins were evaluated in female New Zealand White rabbits exposed to 33+/-1 o C (mean+/-SE) and 10-30% relative humidity (8 h/day) during a 5-day period. Does were treated with pFSH (0.3 mg/0.3 ml Standard Armour) twice daily during three consecutive days with a minimum interval of 8 h between injections. Six hours...
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