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Interface traps generated during device operation or stress is directly related to transistor electrical characteristics and reliability as well as critical to device performance. In this paper, an interface-trap model is included in the unified compact model (Xsim) in order to physically and accurately characterize the interface-trap behavior in silicon-nanowire (SiNW) MOSFETs. The interface-trap...
CMOS very large scale integration (VLSI) circuit reliability modeling and simulation have attracted an intense research interest in the last two decades, and as a result, almost all IC reliability simulation tools now try to incrementally characterize the wearout mechanisms of aged devices in iterative ways. These tools are able to accurately simulate the device's wearout process and predict its impact...
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