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Negative Bias Temperature Instability (NBTI) is a degradation phenomenon that occurs in PMOS transistors during circuit lifetime. Recent works have proposed transistor level and circuit level models that allow designers to deal with such phenomenon. Based on these models and taking into account Random Dopant Fluctuation (RDF), we study the possibility of detecting SRAM core-cells that are prone to...
This paper investigated the self-heating effects in poly-Si thin-film transistors (TFTs) and circuit(s) by using a self-consistent electro-thermal simulation approach. The analysis indicates that, for the poly-Si technology, self-heating may lead to a significant degradation of the device's characteristics, and severely impact the circuit performance; therefore, reinforce the need for effective cooling...
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