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Results are reported of direct‐write X‐ray lithography using a hard X‐ray beam focused by a Fresnel zone plate with an outermost zone width of 40 nm. An X‐ray beam at 7.5 keV focused to a nano‐spot was employed to write arbitrary patterns on a photoresist thin film with a resolution better than 25 nm. The resulting pattern dimension depended significantly on the kind of underlying substrate, which...