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Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled...
In this work a UTBB FDSOI model has been proposed by which leakage current is drastically reduced. Therefore it gives us freedom to scale down the device. Various comments on Sub-threshold slope (SS) and threshold voltage have been made. Effect of Buried Oxide (BOX) and Channel length variation has been described in terms of on-state current, off-state current, threshold voltage and SS. AC analysis...
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