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Summary form only given. High-order harmonic generation in the strong-field limit has successfully been modeled by a quasistatic picture based on the tunneling ionization of an atom, acceleration of the electron in the continuum, and recombination to the atomic ground state. We report experimental results strongly suggesting that the harmonics with hv<I are predominantly produced by the nonlinear...
This paper demonstrates for the first time that hot carrier injection resulting from reverse-bias emitter-base (EB) stress at 300 K can result in significant shifts in the low-temperature electrical characteristics of epitaxially grown Si- and SiGe-base bipolar transistors. At low injection, the observed temperature dependence of the stress-induced base current leakage is attributed to a Poole-Frenkel...
The superior characteristics of furnace-grown N/sub 2/O-nitrided tunnel dielectric for a microcontroller with embedded flash are reported in this paper. These devices demonstrated excellent write and erase (W/E) endurance with small window closure in comparison to thermal oxide. After extended endurance stress, improved read disturb lifetime and good drain disturb characteristics were obtained with...
In this study, voltage and current stress measurements in the Fowler-Nordheim regime, performed on gate oxides (9 nm-28 nm), indicated that a ramped pre-stress prior to a constant stress can increase the time to breakdown in some cases. In the literature oxide breakdown is said to be related to a fixed amount of trapped oxide charge or to a fixed amount of generated traps in the oxide. However, these...
The low-level stress induced excess current (SIEC) characteristics of 92 /spl Aring/ wet oxide are investigated in detail. As a result of the systematic investigations of the low-level E-J characteristics and the corresponding changes of net oxide charge, we have found that SIEC can be interpreted as electron tunneling processes into five kinds of different traps. As for the reproducible SIEC components,...
Oxides used in EEPROMs have severe limitations placed on leakage currents due to long data retention time requirements. During write/erase (W/E) cycling, traps, responsible for both decreased tunneling currents and increased stress-induced leakage currents (SILCs), are generated inside the tunnel oxides. The decreased tunneling currents impose endurance limitations. The increased SILCs are partially...
The field dependence of oxide charge detrapping time in a 0.6 /spl mu/m DDD n-MOSFET subject to hot carrier stress was characterized. A series of oxide trap charging and discharging conditions were performed using GIDL current as a direct monitor of the transient characteristics of oxide charge detrapping. An analytical model accounting for the GIDL current transient was developed. The measured result...
Thickness mapping of thin dielectrics, one of the most important parameters for semiconductor reliability monitoring, is investigated by means of the Fowler-Nordheim (FN) current distribution. Local thinning in otherwise homogeneous dielectrics, like MOS gate oxide or EEPROM tunneling oxide, is accompanied by a sharp increase of the FN-current at these sites. The spatially resolved detection of measurable...
It has been shown that trap generation inside thin oxides during high voltage stressing can be coupled to time-dependent-dielectric-breakdown distributions through the statistics linking wearout to breakdown. Since the traps play a crucial role in the wearout/breakdown process, it is important to understand the properties of these traps. Oxides with thicknesses between 2.5 nm and 22 nm have been studied...
A new model is proposed for the AC-stress-induced leakage current in flash EEPROM tunnel oxides. This model is based on tunneling trap sites generated (increased leakage) during the on-time of a stress pulse and deactivated (decreased leakage) during the off-time. We have characterized this neutralization effect and its role in the reduction of the AC-stress-induced leakage current. Using the model...
Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant...
Electron capture and excess current after the substrate hot-hole injection into a 131 /spl Aring/ oxide have been studied. The gate current-gate voltage characteristics, drain current-gate voltage characteristics, and capacitance-voltage curves in p-channel MOSFETs were measured before and after the hole injection and after subsequent electron injection. Excess current obviously appeared under positive...
A new kind of stress induced low level leakage current (LLLC) in thin silicon dioxide is reported. It is observed after the stress of hot hole injection at the drain edge. Since the voltage dependence of this new kind of LLLC is steeper than that in the conventional FN stress-induced LLLC, each conduction mechanism may be different. This LLLC is reduced by both hot electron injection and UV irradiation...
Stress-induced low-level leakage current in ultrathin silicon dioxide films is correlated with neutral oxide trap generation based on first-order kinetics. The conduction mechanism is explained by Fowler-Nordheim tunneling from the leakage spot, generated at the cathode interface, to the neutral oxide trap level, lower in energy than the SiO/sub 2/ barrier height.<<ETX>>
Charge loss through ONO dielectric is limited by the oxide conductivity. The leakage current is too large to be explained by pure electron injection from the floating gate through the bottom oxide. A trap-assisted model is proposed wherein electrons tunnel to oxide traps and are then emitted. The coupling of the trap level to oxide phonons results in virtual energy levels in the oxide which allow...
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