The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The fabrication of a 20 nm strained-Si on a 360 nm relaxed-SiGe layer structure using SIMOX technology was successfully demonstrated for the first time. The thin relaxed-SiGe layer on SiO2 was obtained by the direct implantation of oxygen into the thick SiGe layer, and by annealing. It was found that hydrogen termination produced by HF treatment allows successful regrowth of strained-Si layer on the...