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In this study, we investigated the effect of a post annealing sequence on the HfO2 crystal phase and the memory window of charge trap devices with TiN-Al2O3-HfO2-SiO2-Si stacks. The charge trap dielectrics of HfO2 were deposited by atomic layer deposition and were annealed in an oxygen environment with or without Al2O3 blocking oxides. X-ray diffraction analysis showed that, after thermal annealing,...