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F-doped SnO2 (FTO) thin films have been prepared by sputtering SnO2-SnF2 target in Ar+H2 atmosphere. The effects of H2/Ar flow ratio on the structural, electrical and optical properties of the films were investigated at two substrate temperatures of 150 and 300°C and two base pressures of 3.5×10−3 and 1.5×10−2Pa. The results show that introducing H2 into sputtering atmosphere can lead to the formation...