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We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar...
We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar...
In this paper, lasing in GaAs-based nanowires grown by selective-area MOVPE are reported. Strong emission were seen from single nanowires in near-infrared region under cw excitation. A series of periodic peaks were appeared in photoluminescence spectra. Optically pumped lasing is deducted from above results.
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