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Evaporated Si grew epitaxially on Si(100) at approximately 500 o C when very thin Ni layers were deposited on the substrate even under a medium vacuum condition of 10 -7 torr. Cross-sectional TEM and electron diffraction showed the formation of a thin and uniform epitaxial NiSi 2 layer on the Si substrate. Thus the Ni enhanced low-temperature Si epitaxial growth can be...