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This paper presents a GaN-HEMT DPA IC based on a compact load network for LTE small cells. The gate widths of the transistors for the carrier and peaking amplifiers are optimized to have the same load impedance of 100 Ω. A shunt inductor is added to compensate for the output capacitor of each transistor with parallel resonance. A x-type high-pass impedance transformer based on lumped components is...